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| (R) STPS20L40CF/CW/CT/CFP LOW DROP POWER SCHOTTKY RECTIFIER MAJOR PRODUCTS CHARACTERISTICS A1 IF(AV) VRRM Tj (max) VF (max) FEATURES AND BENEFITS s 2 x 10 A 40 V 150C 0.5 V A2 K s s s LOW FORWARD VOLTAGE DROP MEANING VERY SMALL CONDUCTION LOSSES LOW DYNAMIC LOSSES AS A RESULT OF THE SCHOTTKY BARRIER INSULATED PACKAGE: ISOWATT220AB, TO-220FPAB Insulating voltage = 200V DC Capacitance = 12pF AVALANCHE CAPABILITY SPECIFIED A2 K A1 A2 A1 K TO-220FPAB STPS20L40CFP TO-220AB STPS20L40CT DESCRIPTION A2 Dual center tap Schottky rectifiers designed for high frequency switched mode power supplies and DC to DC converters. These devices are intended for use in low voltage, high frequency inverters, free-wheeling and polarity protection applications. ABSOLUTE RATINGS (limiting values, per diode) A1 K A2 K A1 ISOWATT220AB STPS20L40CF TO-247 STPS20L40CW Symbol Parameter Value 40 VRRM Repetitive peak reverse voltage IF(RMS) RMS forward current 30 IF(AV) 10 Average forward TO-220AB Tc = 135C Per diode 20 current TO-247 = 0.5 Per device 10 ISOWATT220AB Tc = 115C Per diode 20 TO-220FPAB = 0.5 Per device IFSM 180 Surge non repetitive forward current tp = 10 ms Sinusoidal IRRM 1 Peak repetitive reverse current tp = 2 s square F=1kHz IRSM 2 Non repetitive peak reverse current tp = 100 s square PARM Repetitive peak avalanche power 4000 tp = 1s Tj = 25C Tstg - 65 to + 150 Storage temperature range Tj 150 Maximum operating junction temperature * dV/dt Critical rate of rise of reverse voltage 10000 dPtot 1 thermal runaway condition for a diode on its own heatsink *: < dTj Rth( j - a ) July 2003 - Ed: 4B Unit V A A A A A A W C C V/s 1/8 STPS20L40CF/CW/CT/CFP THERMAL RESISTANCES Symbol Rth(j-c) Junction to case Parameter ISOWATT220AB TO-220FPAB TO-247 Per diode Total Coupling Per diode Total Coupling Per diode Total Coupling Value 4.5 3.5 2.5 2.2 1.20 0.3 2.2 1.3 0.3 Unit C/W Rth(j-c) Junction to case C/W Rth(j-c) Junction to case TO-220AB C/W When the diodes 1 and 2 are used simultaneously : Tj(diode 1) = P(diode1) x Rth(j-c)(Per diode) + P(diode 2) x Rth(c) STATIC ELECTRICAL CHARACTERISTICS (per diode) Symbol IR * Parameter Reverse leakage current Forward voltage drop Tests Conditions Tj = 25C Tj = 100C Tj = 25C Tj = 125C Tj = 25C Tj = 125C Pulse test : * tp = 380 s, < 2% Min. Typ. Max. 0.7 Unit mA mA V VR = VRRM 15 IF = 10 A IF = 10 A IF = 20 A IF = 20 A 0.62 0.44 35 0.55 0.5 0.73 0.72 VF * To evaluate the conduction losses use the following equation : P = 0.28 x IF(AV) + 0.022 IF2(RMS) Fig. 1: Average forward power dissipation versus average forward current (per diode). PF(av)(W) 8 7 6 5 4 3 2 1 0 0 2 4 IF(av) (A) 6 8 10 =tp/T T Fig. 2: Average forward current versus ambient temperature( = 0.5, per diode). IF(av)(A) Rth(j-a)=Rth(j-c) TO-220AB/TO-247 = 0.1 = 0.05 = 0.2 = 0.5 =1 tp 12 11 10 9 8 7 6 5 4 3 2 1 0 ISOWATT220AB Rth(j-a)=15C/W T =tp/T tp Tamb(C) 50 75 100 125 150 12 14 0 25 2/8 STPS20L40CF/CW/CT/CFP Fig. 3: Normalized avalanche power derating versus pulse duration. PARM(tp) PARM(1s) 1 Fig. 4: Normalized avalanche power derating versus junction temperature. PARM(tp) PARM(25C) 1.2 1 0.1 0.8 0.6 0.01 0.4 0.2 0.001 0.01 0.1 1 tp(s) 10 100 1000 Tj(C) 0 0 25 50 75 100 125 150 Fig. 5-1: Non repetitive surge peak forward current versus overload duration (maximum values, per diode, TO-220AB / TO-247). Fig. 5-2: Non repetitive surge peak forward current versus overload duration (maximum values, per diode, ISOWATT220AB, TO-220FPAB). IM(A) 100 90 80 70 60 50 40 30 20 IM 10 0 1E-3 140 120 100 80 60 40 IM(A) Tc=25C Tc=75C Tc=125C t Tc=25C Tc=50C Tc=100C t IM 20 0 1E-3 =0.5 t(s) 1E-2 1E-1 1E+0 =0.5 t(s) 1E-2 1E-1 1E+0 Fig. 6-1: Relative variation of thermal impedance junction to case versus pulse duration (TO-220AB / TO-247). Zth(j-c)/Rth(j-c) 1.0 0.8 0.6 0.4 0.2 Single pulse = 0.5 Fig. 6-2: Relative variation of thermal impedance junction to case versus pulse duration (ISOWATT220AB, TO-220FPAB). Zth(j-c)/Rth(j-c) 1.0 0.8 0.6 0.4 T = 0.5 = 0.2 = 0.1 = 0.2 = 0.1 T 0.2 tp(s) 0.0 1E-3 1E-2 1E-1 =tp/T tp Single pulse tp(s) =tp/T tp 1E+0 0.0 1E-3 1E-2 1E-1 1E+0 1E+1 3/8 STPS20L40CF/CW/CT Fig. 7: Reverse leakage current versus reverse voltage applied (typical values, per diode). Fig. 8: Junction capacitance versus reverse voltage applied (typical values, per diode). C(pF) 2000 Tj=150C Tj=125C 2E+2 1E+2 1E+1 1E+0 1E-1 IR(mA) 1000 Tj=75C F=1MHz Tj=25C Tj=25C 1E-2 VR(V) 1E-3 0 5 10 15 20 25 30 35 40 100 VR(V) 1 2 5 10 20 50 Fig. 9: Forward voltage drop versus forward current (maximum values) (per diode). 100.0 IFM(A) Typical values Tj=150C 10.0 Tj=125C Tj=25C 1.0 Tj=75C 0.1 0.0 VFM(V) 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 4/8 STPS20L40CF/CW/CT/CFP PACKAGE MECHANICAL DATA ISOWATT220AB DIMENSIONS REF. A B D E F F1 F2 G G1 H L2 L3 L4 L6 L7 Diam Millimeters Min. Max. 4.40 4.60 2.50 2.70 2.50 2.75 0.40 0.70 0.75 1.00 1.15 1.70 1.15 1.70 4.95 5.20 2.40 2.70 10.00 10.40 16.00 typ. 28.60 30.60 9.80 10.60 15.90 16.40 9.00 9.30 3.00 3.20 Inches Min. Max. 0.173 0.181 0.098 0.106 0.098 0.108 0.016 0.028 0.030 0.039 0.045 0.067 0.045 0.067 0.195 0.205 0.094 0.106 0.394 0.409 0.630 typ. 1.125 1.205 0.386 0.417 0.626 0.646 0.354 0.366 0.118 0.126 s s s Cooling method : C Recommended torque value : 0.55 m.N Maximum torque value : 0.70 m.N 5/8 STPS20L40CF/CW/CT/CFP PACKAGE MECHANICAL DATA TO-220FPAB REF. Min. A B D Dia L6 L2 L3 F2 D F1 L4 L7 DIMENSIONS Millimeters Inches Min. 0.173 0.098 0.096 0.016 0.024 0.045 0.045 0.195 0.094 0.393 1.126 0.385 0.621 0.354 0.114 Max. 0.193 0.114 0.108 0.027 0.039 0.067 0.067 0.204 0.106 0.421 1.204 0.421 0.645 0.389 0.18 Max. 4.9 2.9 2.75 0.70 1 1.70 1.70 5.20 2.70 10.7 30.6 10.7 16.4 9.90 3.50 A H B 4.4 2.5 2.45 0.4 0.60 1.15 1.15 4.95 2.40 10 28.6 9.8 15.8 9.00 2.9 E F F1 F2 G G1 H L2 L3 L4 L6 L7 Dia. 16 Typ. 0.63 Typ. F G1 G E s s s Cooling method : C Recommended torque value : 0.55 m.N Maximum torque value : 0.70 m.N 6/8 STPS20L40CF/CW/CT/CFP PACKAGE MECHANICAL DATA TO-220AB DIMENSIONS REF. H2 Dia L5 C L7 L6 L2 F2 F1 L9 L4 F G1 G M E D A Millimeters Min. Max. 4.40 4.60 1.23 1.32 2.40 2.72 0.49 0.70 0.61 0.88 1.14 1.70 1.14 1.70 4.95 5.15 2.40 2.70 10 10.40 16.4 typ. 13 14 2.65 2.95 15.25 15.75 6.20 6.60 3.50 3.93 2.6 typ. 3.75 3.85 Inches Min. Max. 0.173 0.181 0.048 0.051 0.094 0.107 0.019 0.027 0.024 0.034 0.044 0.066 0.044 0.066 0.194 0.202 0.094 0.106 0.393 0.409 0.645 typ. 0.511 0.551 0.104 0.116 0.600 0.620 0.244 0.259 0.137 0.154 0.102 typ. 0.147 0.151 A C D E F F1 F2 G G1 H2 L2 L4 L5 L6 L7 L9 M Diam. s s s Cooling method : C Recommended torque value : 0.55 m.N Maximum torque value : 0.70 m.N 7/8 STPS20L40CF/CW/CT/CFP PACKAGE MECHANICAL DATA TO-247 DIMENSIONS V REF. Millimeters Max. 5.15 2.60 0.80 1.40 Inches Min. Typ. Max. 0.191 0.203 0.086 0.102 0.015 0.031 0.039 0.055 0.118 0.078 0.078 0.094 0.118 0.133 0.429 0.608 0.620 0.781 0.793 0.145 0.169 0.728 0.559 0.582 1.362 0.216 0.078 0.118 5 60 0.139 0.143 V Dia. H A L5 L L2 L4 F2 F3 V2 F(x3) G = = M E F4 L3 F1 L1 D Min. Typ. A 4.85 D 2.20 E 0.40 F 1.00 F1 3.00 F2 2.00 F3 2.00 F4 3.00 G 10.90 H 15.45 L 19.85 L1 3.70 L2 18.50 L3 14.20 L4 34.60 L5 5.50 M 2.00 V 5 V2 60 Dia. 3.55 2.40 3.40 15.75 20.15 4.30 14.80 3.00 3.65 s s s Cooling method : C Recommended torque value : 0.8m.N Maximum torque value : 1.0m.N Ordering type STPS20L40CF STPS20L40CFP STPS20L40CT STPS20L40CW Marking STPS20L40CF STPS20L40CFP STPS20L40CT STPS20L40CW Package ISOWATT220AB TO-220FPAB TO-220AB TO-247 Weight 2.1g 2g 2g 4.4g Base qty 50 50 50 30 Delivery mode Tube Tube Tube Tube s Epoxy meets UL94,V0 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a registered trademark of STMicroelectronics (c) 2003 STMicroelectronics - Printed in Italy - All rights reserved. STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - Finland - France - Germany Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco - Singapore Spain - Sweden - Switzerland - United Kingdom - United States. http://www.st.com 8/8 |
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